Lateral scaling of 0.25 µm InP/InGaAs SHBTs with InAs emitter cap
- 2 September 2004
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 40 (18) , 1151-1153
- https://doi.org/10.1049/el:20045962
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- InP/InGaAs SHBTs with 75 nm collector and f
T
>500 GHzElectronics Letters, 2003
- Low-power high-speed operation of submicron InP-InGaAs SHBTs at 1 mAIEEE Electron Device Letters, 2003
- Submicron InP-InGaAs single heterojunction bipolar transistors with f/sub T/ of 377 GHzIEEE Electron Device Letters, 2003