InP/InGaAs SHBTs with 75 nm collector and f T >500 GHz
- 2 October 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (20) , 1475-1476
- https://doi.org/10.1049/el:20030951
Abstract
InP/InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, fT of 509 GHz. The 0.35×12 µm2 devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BVCEO of 2.7 V, and operate at current densities above 1100 kA/cm2. This work demonstrates clear progress toward a THz transistor.Keywords
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- Record f
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