Effect of growth temperature on the properties of evaporated tantalum pentoxide thin films on silicon deposited using oxygen radicals
- 1 August 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (3) , 1632-1642
- https://doi.org/10.1063/1.368256
Abstract
No abstract availableThis publication has 40 references indexed in Scilit:
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