Amorphous-silicon/silicon-oxynitride field-effect transistors
- 1 September 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (5) , 454-456
- https://doi.org/10.1063/1.93569
Abstract
The high performance amorphous-silicon field-effect transistors were fabricated by applying silicon oxynitride as the gate insulator and high quality amorphous-silicon film as the active layer. The on-off current ratio was about 107, and the drain current varied by six orders in magnitude while the gate voltage varied by only 3 V. The field-effect mobility was as high as 1.9 cm2/V s, which is several times higher than the one reported to date.Keywords
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