Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H2Se
- 1 June 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (6R)
- https://doi.org/10.1143/jjap.33.3505
Abstract
ZnSe films were grown on GaAs substrates by gas source molecular beam epitaxy using metal Zn and H2Se as sources. H2Se was thermally cracked in a high pressure gas cell. The effects of growth temperature, VI/II ratio and H2Se cracking temperature on ZnSe growth were investigated. Under the condition where the cracked- H2Se flux controlled the growth rate, ZnSe films with smooth surface morphology were obtained at growth temperatures between 250 and 410° C. With increasing cracked- H2Se flux and/or H2Se cracking temperature, facets emerged on the growing surface and surface morphology was degraded.Keywords
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