Ga-Doped ZnSe Grown by Molecular Beam Epitaxy for Blue Light Emitting Diodes

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Abstract
The MBE-grown ZnSe layer on GaAs (100) with an optimum doping of Ga is found to exhibit an extremely low resistivity and a strong blue near-band-gap photoluminescence (PL) emission (∼4610 Å) without any deep broad emissions at room temperature. At lower Ga-cell temperatures, the carrier concentration and blue PL emission intensity increases significantly owing to an increase in substitutional Ga atoms acting as donors. At higher Ga-cell temperatures, an excess incorporation of Ga results in a reduction of carrier concentration, a decrease in blue PL emission, and a marked increase in deep broad emission (∼5900 Å).