High-conductivity heteroepitaxial ZnSe films
- 15 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (10) , 955-957
- https://doi.org/10.1063/1.91774
Abstract
High‐conductivity ZnSe single‐crystalline films have been heteroepitaxially deposited on GaAs substrates using open‐tube chemical vapor transport. Unintentionally doped films had net donor concentrations of 1014–1016 cm−3 and resistivities of 1–103 Ω cm. Resistivity was found to be dependent upon the zinc partial pressure present during deposition.Keywords
This publication has 11 references indexed in Scilit:
- Electrical and photovoltaic properties of Cd1−x Zn x S/p-GaAs heterojunctionsApplied Physics B Laser and Optics, 1980
- Molecular beam epitaxial growth of low-resistivity ZnSe filmsApplied Physics Letters, 1979
- Shallow acceptors and p-type ZnSeApplied Physics Letters, 1979
- Transport kinetics in horizontal ZnS epitaxial growth systemsJournal of Crystal Growth, 1978
- Electrical and Photovoltaic Properties of CdS–GaAs JunctionsJapanese Journal of Applied Physics, 1975
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972
- Vapor-Phase Epitaxial Growth and Some Properties of ZnSe, ZnS, and CdSJournal of the Electrochemical Society, 1972
- Barrier Heights and Contact Properties of n-Type ZnSe CrystalsJournal of Applied Physics, 1969
- Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier DiodesJournal of Applied Physics, 1966
- PURIFICATION OF II–VI COMPOUNDS BY SOLVENT EXTRACTIONApplied Physics Letters, 1962