The observation of strain effects in the photoluminescence spectrum of excitons bound to neutral acceptors in indium phosphide
- 25 May 1972
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 5 (10) , L110-L112
- https://doi.org/10.1088/0022-3719/5/10/002
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Exciton Recombination Radiation of GaAs: ZnPhysical Review B, 1970
- Stress Dependence of Photoluminescence in GaAsPhysical Review B, 1967