Infrared Spectroscopy of Intersitial Oxygen in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A discussion of the isotope shift of the low temperature spectrum of the stretching mode of interstitial oxygen (Oi) in silicon introduces IR results showing the interaction of Oi with the silicon lattice. Evidence is given that the temperature dependence of a combination band observed at liquid helium temperature (LHT) at 1205.7 cm−1 is responsible for the room temperature (RT) band at 1227 cm−1 and that a weak band near 1013 cm−1 is an overtone of the 518 cm−1 band.Keywords
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