Mass Spectrometry Detection of SiHm and CHm Radicals from SiH4–CH4–H2 RF Discharges under High Temperature Deposition Conditions of Silicon Carbide

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Abstract
The technique of threshold ionization mass spectrometry is applied to the measurement of SiH3, SiH2 and CH3, CH2 radical concentrations under plasma-enhanced chemical vapor deposition (PECVD) conditions from SiH4 and CH4 radio-frequency (RF) discharges between 250° C and 750° C. Relative surface reaction probabilities and gas phase reactivities of the radicals are analyzed. It appears that the surface reaction probability of CH3 on a growing hydrogenated amorphous carbon film is about 18 times smaller than the corresponding surface reaction probability of SiH3 on a growing hydrogenated amorphous silicon film. However, at high temperature above ≈500° C the surface reaction probability of CH3 is enhanced upon transition from a pure hydrogenated carbon film to a silicon-rich surface.