Pb-defects and visible photoluminescence in porous silicon
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 39-43
- https://doi.org/10.1016/0022-2313(93)90103-t
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Study of anodic oxidation of porous silicon: relation between growth and physical propertiesJournal of Luminescence, 1993
- Defects in porousp-type Si: An electron-paramagnetic-resonance studyPhysical Review B, 1993
- Luminescence degradation in porous siliconApplied Physics Letters, 1992
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Theoretical calculation of the electron-capture cross section due to a dangling bond at the Si(111)-interfacePhysical Review B, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfacesPhysical Review B, 1988
- 2 9Si hyperfine structure of unpaired spins at the Si/SiO2 interfaceApplied Physics Letters, 1983
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981