Study of anodic oxidation of porous silicon: relation between growth and physical properties
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 57 (1-6) , 13-18
- https://doi.org/10.1016/0022-2313(93)90098-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Pb-defects and visible photoluminescence in porous siliconJournal of Luminescence, 1993
- Partial oxidation of porous silicon by thermal process: study of structure and electronic defectsJournal of Luminescence, 1993
- Defects in porousp-type Si: An electron-paramagnetic-resonance studyPhysical Review B, 1993
- Studies of coherent and diffuse x-ray scattering by porous siliconJournal of Applied Physics, 1992
- Anodic Oxidation of Porous Silicon Layers Formed on Lightly p‐Doped SubstratesJournal of the Electrochemical Society, 1991
- Photoluminescence of high porosity and of electrochemically oxidized porous silicon layersSurface Science, 1991
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Porosity and Pore Size Distributions of Porous Silicon LayersJournal of the Electrochemical Society, 1987
- An experimental and theoretical study of the formation and microstructure of porous siliconJournal of Crystal Growth, 1985