The detection and prevention of sulphur contamination in the LPE growth of indium phosphide
- 1 June 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 58 (1) , 127-132
- https://doi.org/10.1016/0022-0248(82)90219-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- The use of silica boats for liquid epitaxy of indium phosphideJournal of Crystal Growth, 1981
- Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON B InPJournal of Electronic Materials, 1980
- High purity LPE InPJournal of Electronic Materials, 1978
- Very-high-purity InP l.p.e. layersElectronics Letters, 1977
- Effective distribution coefficients of some group VI elements in indium phosphide grown by liquid phase epitaxySolid-State Electronics, 1974