Growth of Si1−xGex on silicon by liquid-phase epitaxy
- 1 December 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (11) , 4445-4449
- https://doi.org/10.1063/1.339083
Abstract
We demonstrate heteroepitaxial growth of smooth homogeneous Si1−xGex layers on crystalline silicon substrates by means of liquid‐phase epitaxy. For a given saturation temperature Tsat, different alloy compositions x can be grown by varying the composition of the solutions. However, smooth epitaxial layers are obtained only up to a critical germanium content xc which increases as Tsat decreases and depends upon the choice of solvent.This publication has 14 references indexed in Scilit:
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