Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1984
- Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloysSurface Science, 1984
- Silicon molecular beam epitaxy on gallium phosphideApplied Physics Letters, 1983
- Theory of silicon superlattices: Electronic structure and enhanced mobilityJournal of Applied Physics, 1983
- Growth of high quality Ge MBE filmJournal of Crystal Growth, 1983
- Silicon MBE apparatus for uniform high-rate deposition on standard format wafersJournal of Vacuum Science and Technology, 1982
- Elastic strain and misfit dislocation density in Si0.92Ge0.08 films on silicon substratesThin Solid Films, 1977
- Dependence of residual damage on temperature during Ar+ sputter cleaning of siliconJournal of Applied Physics, 1977
- Profiling of SiGe superlattices by He backscatteringThin Solid Films, 1976
- Intrinsic Optical Absorption in Germanium-Silicon AlloysPhysical Review B, 1958