Hydrogen Effects on Si1-xGex/Si Heteroepitaxial Growth by Si2H6- and GeH4-Source Molecular Beam Epitaxy

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Abstract
The influences of hydrogen atoms on the Si1- x Ge x heteroepitaxial growth on Si(100) and Si(111) surfaces using Si2H6- and GeH4-source molecular beam epitaxy (MBE) with additional atomic hydrogen has been studied using reflection high energy electron diffraction (RHEED). In the Si1- x Ge x growth on Si(100) and Si(111) surfaces, it is found that the dissociative adsorption rates of Si2H6 and GeH4 are significantly dependent upon the surface orientation and the atomic element at the adsorption sites. The role of atomic hydrogen irradiation in the growth rate of Si1- x Ge x on Si(100) and Si(111) surfaces is to reduce the density of adsorption sites for the hydride gases and to suppress the surface segregation of Ge atoms. However, the altered behavior in the growth rate of Si1- x Ge x on Si(100) and Si(111) is observed due to the difference in the adsorption rates of the gaseous hydrides.