Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 467-471
- https://doi.org/10.1016/0022-0248(93)90662-g
Abstract
No abstract availableKeywords
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