Selective heteroepitaxial growth of Si1−xGex using gas source molecular beam epitaxy
- 19 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (12) , 1107-1109
- https://doi.org/10.1063/1.102582
Abstract
Si1−xGex heteroepitaxial layers have been grown on Si(100) surfaces by gas source molecular beam epitaxy. Si2H6 and GeH4 were used as the Si and Ge source gases, respectively. The Ge mole fraction x in the grown film was found to be controlled by the GeH4 flow rate. The growth rate decreased gradually with increasing GeH4 flow rate. Selective epitaxial growth of Si1−xGex using a SiO2 mark on a Si(100) substrate was successfully achieved.Keywords
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