High doping of phosphorus in Si using gas source molecular beam epitaxy
- 10 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2) , 131-133
- https://doi.org/10.1063/1.102122
Abstract
Phosphorus doping using PH3 in gas source Si molecular beam epitaxy was studied. High phosphorus doping up to 2×1020 cm−3 was successfully achieved. The phosphorus concentration in the epitaxial layer was proportional to the PH3 flow rate. Moreover, selective growth of the phosphorus‐doped layer was possible. The p‐n diode, which consisted of a selectively grown phosphorus‐doped layer, a p−‐Si (100) substrate, and a SiO2 sidewall, showed a normal I‐V characteristic.Keywords
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