GexSi1−x strained-layer heterostructure bipolar transistors
- 28 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (13) , 1089-1091
- https://doi.org/10.1063/1.99220
Abstract
Double heterostructure bipolar transistors with the base region consisting of a p‐Ge0.5Si0.5 strained‐layer superlattice have been grown by molecular beam epitaxy. At a wavelength of 1.3 μm, optical gain as high as 52 has been achieved in two‐terminal phototransistors. The large photocurrent is inferred to be a product of the transistor gain, on the order of 20, and avalanche multiplication. A differential current gain of 10 has been obtained in the three‐terminal bipolar transistors. The incorporation of a narrow band‐gap GexSi1−x superlattice base is expected to result in higher emitter injection efficiency as compared to Si bipolar transistors.Keywords
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