Carrier Transport Properties of Sputter-Deposited CdS/CdTe Heterojunction

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Abstract
CdS, CdTe and CdS/CdTe heterojunction films were deposited on glass substrates by RF sputter deposition using undoped CdS and CdTe targets, respectively. The deposited CdS and CdTe films have high resistivities greater than 106 Ω·cm and 109 Ω·cm, and preferential orientations at (002) and (111) planes, respectively. CdS/CdTe heterojunction film shows good rectification properties. The carrier transport properties of the CdS/CdTe heterojunction were investigated by means of current-voltage measurements at different temperatures. The forward current is classified into the tunneling-recombination current, recombination current, space charge limited current (SCLC) and trap filling of SCLC regions by considering applied voltage. The reverse current is dominated by the generation recombination current in the depletion region of the CdTe layer.