Determination of deep levels in semi-insulating cadmium telluride by thermally stimulated current measurements
- 16 September 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 31 (1) , 247-253
- https://doi.org/10.1002/pssa.2210310127
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ionsSolid-State Electronics, 1974
- Undoped high-resistivity cadmium telluride for nuclear radiation detectorsJournal of Applied Physics, 1974
- CdTe Detectors from Indium-Doped Tellurium-Rich SolutionsIEEE Transactions on Nuclear Science, 1974
- Hole mobility and Poole-Frenkel effect in CdTeJournal of Applied Physics, 1973
- Investigation of trapping levels in heavy ion implanted cadmium tellurideRadiation Effects, 1973
- Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectorsPhysica Status Solidi (a), 1970
- Thermostimulated currents in n-type CdTe single crystalsCzechoslovak Journal of Physics, 1969
- Thermostimulated currents in p-type cadmium telluride single crystalsCzechoslovak Journal of Physics, 1967
- The evaluation of electron trapping parameters from conductivity glow curves in cadmium sulphideBritish Journal of Applied Physics, 1964
- A Note on the Analysis of First-Order Glow CurvesJournal of Applied Physics, 1953