Thermally stimulated current measurements on silicon junctions produced by implantation of low energy boron ions
- 31 December 1974
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 17 (12) , 1293-1297
- https://doi.org/10.1016/0038-1101(74)90007-0
Abstract
No abstract availableKeywords
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