Implanted Interstitial Boron Atoms in Silicon
- 1 May 1972
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (9) , 349-351
- https://doi.org/10.1063/1.1654181
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- CHANNELING STUDY OF BORON-IMPLANTED SILICONApplied Physics Letters, 1970
- Photoconductivity Studies of Defects in-Type Silicon: Boron Interstitial and Aluminum Interstitial DefectsPhysical Review B, 1970
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965