THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICON
- 15 April 1970
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (8) , 313-315
- https://doi.org/10.1063/1.1653208
Abstract
Channeling-effect measurements have been used to investigate the lattice location of boron atoms implanted into silicon at an energy of 56 keV and with doses in the interval 1014–1015 ions/cm2. Measurements have been made as a function of implantation temperature and subsequent anneal treatment. The effect of post-bombardment with different doses of 680-keV protons has also been investigated.Keywords
This publication has 7 references indexed in Scilit:
- Electrical Behavior of Group III and V Implanted Dopants in SiliconJournal of Applied Physics, 1969
- INFLUENCE OF n-TYPE DOPANTS ON THE LATTICE LOCATION OF IMPLANTED p-TYPE DOPANTS IN Si AND GeApplied Physics Letters, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969
- Evidence of a replacement reaction between ion implanted substitutional Tl dopants and interstitial Si atomsRadiation Effects, 1969
- Solid Solubility and Diffusion Coefficients of Boron in SiliconJournal of the Electrochemical Society, 1969
- LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO GeApplied Physics Letters, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967