LATTICE LOCATION OF DOPANT ELEMENTS IMPLANTED INTO Ge

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Abstract
The orientation dependence of the backscattered yield of 1.8‐MeV carbon ions has been used to determine the lattice location of In, Tl, Sb, Bi, and Pb ions implanted into Ge at 30–40 keV and at temperatures between 300° and 350°C. Similar to the behavior in silicon, the group IV and V elements are found to be highly substitutional. Thallium exhibits nearly equal numbers of atoms in the 〈111〉 interstitial sites and on the substitutional sites (as in Si). In indium implants, on the other hand, we find no evidence of the clearly defined interstitial component previously seen in Si. In all cases, we observe substitutional concentrations orders of magnitude above thermal equilibrium solubilities.