A COMPARISON OF THE HOT IMPLANTATION BEHAVIOR OF SEVERAL GROUP-III AND -V ELEMENTS IN Si AND Ge

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Abstract
The orientation dependence of the backscattered yield of 1.0‐MeV helium ions has been used to determine the lattice location of several group‐III and group‐V elements implanted at elevated temperatures in Si and Ge. We find that for the slower diffusants, i.e. group‐V elements in Si and group III in Ge, a considerably higher fraction is located on substitutional sites than for the faster diffusants. The concentration of Sb and Bi on substitutional lattice sites can exceed the equilibrium solubility by at least an order of magnitude. For In and Tl in Si, we find equal numbers of ions on the 〈111〉 interstitial lattice sites and on the substitutional lattice sites which suggest that some sort of pairing occurs between interstitial and substitutional impurities; again, the substitutional content can exceed the equilibrium solubility limit by large factors.