Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy
- 1 December 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 115 (1-4) , 648-651
- https://doi.org/10.1016/0022-0248(91)90820-u
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPEJournal of Crystal Growth, 1989
- Energy band-gap bowing parameter in an AlxGa1−x N alloyJournal of Applied Physics, 1987
- The influence of TMA and SiH4 on the incorporation rate of Ga in AlxGa1−xN crystals grown from TMG and NH3Journal of Crystal Growth, 1986
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986