Energy band-gap bowing parameter in an AlxGa1−x N alloy
- 1 May 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (9) , 4540-4543
- https://doi.org/10.1063/1.338387
Abstract
Optical measurements are performed near the fundamental absorption edge for single-crystal AlxGa1−x N epitaxial layers in the composition range of 0≤x≤0.4. The dependence of the energy band gap on composition is found to deviate downwards from linearity, the bowing parameter being b=1.0±0.3 eV. The origin of the large bowing is discussed in terms of the pseudopotential of Al and Ga based on the pseudopotential of the Heine–Abarenkov type. With increasing x the absorption edges broaden, which is attributed to the increase of the compositional nonuniformity.This publication has 22 references indexed in Scilit:
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