Subthreshold design considerations for insulated-gate field-effect transistors
- 1 January 1973
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Low level currents in insulated gate field effect transistorsSolid-State Electronics, 1972
- Subthreshold drain leakage currents in MOS field-effect transistorsIEEE Transactions on Electron Devices, 1972
- Ion-implanted complementary MOS transistors in low-voltage circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1972
- Technology and performance of integrated complementary MOS circuitsIEEE Journal of Solid-State Circuits, 1969