Atomic reconstruction of the silicon (230) surface

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Abstract
In a recent field-ion-microscopy study of thermally equilibrated Si surfaces at 800 °C, two distinctly different atomic structures of a silicon surface were observed at the (230) poles. We present here a model for this reconstruction. One of the image structures, with a rhombic unit cell, can be formed by dimerization of top- and fifth-layer atoms and a shift, in both the vertical and horizontal directions, of third-layer atoms. The other image structure, with a rectangular unit cell, can be formed by displacement of top- and fourth-layer atoms.