Ferroelectricity of Bi2SrTa2O9 Single Crystals Grown by the Self-Flux Method
- 1 December 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (12R) , 7267-7271
- https://doi.org/10.1143/jjap.36.7267
Abstract
Ferroelectric hysteresis of a Bi2SrTa2O9 single crystal, a promising candidate for ferroelectric random access memories (FeRAM), was observed at 200° C. This single crystal, grown by the self-flux method, has a composition characterized as Bi x Sr y Ta2O9 (x=1.91±0.05, y=1.27±0.08). Observing the optical anisotropy of the c-plane, it was found that this material has a Curie temperature (T c) higher than 250° C. Measuring the electrical properties on the c -axis and in the c -plane, it was confirmed that this material has electrical anisotropy. Furthermore, the domain motion of the crystal was observed under an electric field using a high-resolution charge-coupled-device (CCD) microscope system.Keywords
This publication has 31 references indexed in Scilit:
- New Low Temperature Processing of Sol-Gel SrBi2Ta2O9 Thin FilmsJapanese Journal of Applied Physics, 1996
- The Microstructure of SrBi2Ta2O9 FilmsMRS Proceedings, 1995
- Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVDMRS Proceedings, 1995
- Complex Impedance and Modulus Analysis on Electrical Anisotropy of Layer-Structured BaBi4Ti4O15 Single Crystal in Paraelectric PhaseJournal of the Ceramic Society of Japan, 1995
- Ferroelectric Properties and Fatigue Characteristics of Bi4Ti3O12 Thin Films by Sol-Gel ProcessingJapanese Journal of Applied Physics, 1994
- Electrical Anisotropy of BaBi4Ti4O15 Single CrystalJournal of the Ceramic Society of Japan, 1994
- Preparation of C-Axis-Oriented Bi4Ti3O12 Thin Films by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Structure refinement of commensurately modulated bismuth strontium tantalate, Bi2SrTa2O9Acta crystallographica Section B, Structural science, crystal engineering and materials, 1992
- Structural basis of ferroelectricity in the bismuth titanate familyMaterials Research Bulletin, 1971
- Bismuth Titanate. A FerroelectricJournal of Applied Physics, 1961