Preparation and Properties of ferroelectric Bi2SrTa2O9 thin films for FeRAM using Flash-MOCVD
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 6 references indexed in Scilit:
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- Preparation of Ferroelectric Thin Films of Bismuth Layer Structured CompoundsJapanese Journal of Applied Physics, 1995
- Preparation of Bi-Based Ferroelectric Thin Films by Sol-Gel MethodJapanese Journal of Applied Physics, 1995
- Preparation and ferroelectric properties of SrBi2Ta2O9 thin filmsApplied Physics Letters, 1995
- Liquid Delivery of Low Vapor Pressure MOCVD PrecursorsMRS Proceedings, 1993
- Ferroelectric MemoriesScience, 1989