ESR of residual defects in silicon from recoil implantation of oxygen in Si/SiO₂systems

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1 January 1980

journal article
research article
Published by Taylor & Francis in Radiation Effects

Vol. 47 (1-4) , 51-55
https://doi.org/10.1080/00337578008209188

Abstract

(1980). ESR of residual defects in silicon from recoil implantation of oxygen in Si/SiO2 systems. Radiation Effects: Vol. 47, No. 1-4, pp. 51-55.

Keywords

This publication has 6 references indexed in Scilit:

Paramagnetic defects in silicon/silicon dioxide systems
Surface Science, 1976
Paramagnetic Centers Created in Si-SiO₂Structure by Ion Implantation
Japanese Journal of Applied Physics, 1975
Residual defects in Si produced by recoil implantation of oxygen
Applied Physics Letters, 1975
Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations
Applied Physics Letters, 1973
Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I
Japanese Journal of Applied Physics, 1971
ESR Centers in Silicon Monoxide
Japanese Journal of Applied Physics, 1970