Anomalous residual damage in Si after annealing of ``through-oxide'' arsenic implantations
- 1 September 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (5) , 268-270
- https://doi.org/10.1063/1.1654884
Abstract
During a study of the annealing of damage produced by high‐dose (1015–1016 ions/cm2) arsenic implantations into Si, a stable high‐defect‐density structure was observed. It resulted from implantations through thin SiO2 films covering the Si. Formation of the stable defect structure is related to the presence of the SiO2 film during implantation, but not during annealing. Subsequent experiments indicate that knock‐on of oxygen by the As ions is not directly responsible for the effect.Keywords
This publication has 4 references indexed in Scilit:
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- The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into SiliconJournal of the Electrochemical Society, 1971
- Method for producing large Si films for preselected imperfection analysisJournal of Scientific Instruments, 1965