Lattice scattering mobility of a two-dimensional electron gas in GaAs
- 15 November 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (10) , 4849-4852
- https://doi.org/10.1103/physrevb.22.4849
Abstract
Theory of electron mobility is presented for a two-dimensional electron gas in a polar material. Calculated values of mobility are given for gallium arsenide for temperatures of 77-300 K and surface electron concentrations of (0.5-1.2) × . The mobility values are much lower than the bulk values and are also strongly dependent on electron concentration.
Keywords
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