Surface etching kinetics of hydrogen plasma on InP
- 1 July 1982
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 80-82
- https://doi.org/10.1063/1.93296
Abstract
The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm−3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10−6 Torr) by residual water vapor. However, at low base pressure (≲10−7 Torr) the native oxide (∼10 Å) can be etched away.Keywords
This publication has 3 references indexed in Scilit:
- Hydrogen plasma etching of semiconductors and their oxidesJournal of Vacuum Science and Technology, 1982
- Hydrogen plasma etching of GaAs oxideApplied Physics Letters, 1981
- Surface modification of InP by plasma techniques using hydrogen and oxygenThin Solid Films, 1981