Dislocations in lattice-mismatched wide-gap II-VI/GaAs heterostructures as laser light scatterers: Experiment and theory
- 15 July 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (2) , 1203-1209
- https://doi.org/10.1063/1.360358
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- ZnSe/ZnMgSSe blue laser diodeElectronics Letters, 1992
- In situ spectroscopic ellipsometry in molecular beam epitaxyJournal of Vacuum Science & Technology A, 1992
- Real time control of the molecular-beam epitaxial growth of CdHgTe and CdTe/HgTe superlattices using ellipsometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Diffuse optical reflectivity measurements on GaAs during molecular-beam epitaxy processingJournal of Vacuum Science & Technology A, 1992
- In situ real-time determination of the free-carrier density in doped ZnSe films during molecular beam epitaxial growthApplied Physics Letters, 1992
- Automated control of III–V semiconductor composition and structure by spectroellipsometryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wellsApplied Physics Letters, 1991
- Blue-green laser diodesApplied Physics Letters, 1991
- Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical DopingJapanese Journal of Applied Physics, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990