Improved electronic properties of GaAs surfaces stabilized with phosphorus
- 27 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2387-2389
- https://doi.org/10.1063/1.104879
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Thermal decomposition studies of group V hydridesJournal of Crystal Growth, 1991
- Structural and chemical properties of InAs layers grown on InP(100) surfaces by arsenic stabilizationJournal of Vacuum Science & Technology B, 1990
- Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1988
- GaAs MIS structures with SiO 2 using a thin silicon interlayerElectronics Letters, 1988
- The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS StructuresJapanese Journal of Applied Physics, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Influence of S and Se on the Schottky-barrier height and interface chemistry of Au contacts to GaAsJournal of Vacuum Science & Technology B, 1985
- Passivation of the GaAs surface by an amorphous phosphorus overlayerApplied Physics Letters, 1984
- Recombination at semiconductor surfaces and interfacesSurface Science, 1983