An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 31 (1) , 44-48
- https://doi.org/10.1109/3.341706
Abstract
No abstract availableKeywords
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