Single-ended output GaAs/AlGaAs single quantum well laser with a dry-etched corner reflector
- 14 May 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 1934-1936
- https://doi.org/10.1063/1.103026
Abstract
GaAs/AlGaAs single quantum well lasers with integrated corner reflectors have been fabricated using chemically assisted ion beam etching. The air-GaAs interface is internally totally reflecting, and no coherent radiation is transmitted through the corner reflector. The corner reflector laser was compared with a conventional Fabry–Perot laser cleaved from the same wafer. An 11% reduction in threshold current and a reduction of the far-field angle from 4.4° to 0.7° was measured.Keywords
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