Microstructural characterisation of GaN(As) films grown on (001) GaP by molecular beam epitaxy
- 1 February 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 171 (3-4) , 321-332
- https://doi.org/10.1016/s0022-0248(96)00663-x
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Microtwin nucleation and propagation in heteroepitaxial II-VI compounds on (001)-oriented GaAs substratesPhilosophical Magazine A, 1995
- The growth and properties of mixed group V nitridesJournal of Electronic Materials, 1995
- Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxyApplied Physics Letters, 1995
- Auger investigation of group III nitride films grown by molecular beam epitaxyJournal of Crystal Growth, 1995
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Zinc-blende–wurtzite polytypism in semiconductorsPhysical Review B, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and HydrazineJapanese Journal of Applied Physics, 1986
- Nature, origin and effect of dislocations in epitaxial semiconductor layersJournal of Crystal Growth, 1978