Low-temperature growth of crystalline silicon on a chlorine-terminated surface

This publication has 13 references indexed in Scilit:

• High Rate Deposition of Microcrystalline Silicon Using Conventional Plasma-Enhanced Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1998
• Control of Orientation for Polycrystalline Silicon Thin Films Fabricated from Fluorinated Source Gas by Microwave Plasma Enhanced Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1998
• Intrinsic microcrystalline silicon by plasma-enhanced chemical vapor deposition from dichlorosilane
  Applied Physics Letters, 1998
• Fast Deposition of Amorphous and Microcrystalline Silicon Films from SiH₂Cl₂–SiH₄–H₂ by Plasma-Enhanced Chemical Vapor Deposition
  Japanese Journal of Applied Physics, 1997
• In situ real time studies of the formation of polycrystalline silicon films on glass grown by a layer-by-layer technique
  Applied Physics Letters, 1995
• Real time i n s i t u observation of the film growth of hydrogenated amorphous silicon by infrared reflection absorption spectroscopy
  Applied Physics Letters, 1990
• Growth of Amorphous, Microcrystalline, and Epitaxial Silicon in Low Temperature Plasma Deposition
  MRS Proceedings, 1990
• Role of Surface and Growth-Zone Reactions in the Formation Process of µc-Si:H
  MRS Proceedings, 1989
• Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
  Journal of Non-Crystalline Solids, 1983
• A thermodynamic criterion of the crystalline-to-amorphous transition in silicon
  Philosophical Magazine Part B, 1982