Formation kinetics and control of microcrystallite in μc-Si:H from glow discharge plasma
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 767-774
- https://doi.org/10.1016/0022-3093(83)90284-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Glow-Discharge Deposition of a-Si: H from Pure Si2H6 and Pure SiH4Japanese Journal of Applied Physics, 1983
- Wide-Rrange Control of Crystallite Size and Its Orientation in Glow-Discharge Deposited µc-Si:HJapanese Journal of Applied Physics, 1983
- Plasma spectroscopy—Glow discharge deposition of hydrogenated amorphous siliconThin Solid Films, 1982
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H FilmsJapanese Journal of Applied Physics, 1981
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- (Invited) Optical, Electrical and Structural Properties of Plasma-Deposited Amorphous SiliconJapanese Journal of Applied Physics, 1981
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and Structural Properties of Phosphorous-Doped Glow-Discharge Si:F:H and Si:H FilmsJapanese Journal of Applied Physics, 1980
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979
- The preparation of thin layers of Ge and Si by chemical hydrogen plasma transportSolid-State Electronics, 1968