Properties of heavily doped GDSi with low resistivity
- 1 August 1979
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 34 (1) , 1-11
- https://doi.org/10.1016/0022-3093(79)90002-4
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- Thermoelectric power in phosphorous doped amorphous siliconPhilosophical Magazine, 1977
- Temperature dependent conductivity of closely compensated phosphorus-doped siliconPhilosophical Magazine, 1977
- Photoluminescence in pure and doped amorphous siliconPhilosophical Magazine, 1977
- On the deposition of amorphous silicon films from glow discharge plasmas of silaneThin Solid Films, 1977
- Substitutional doping in amorphous semiconductors the As-Si systemPhilosophical Magazine, 1976
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Optical Investigation of Different Silicon FilmsJournal of the Electrochemical Society, 1974
- Evidence of Voids Within the As-Deposited Structure of Glassy SiliconPhysical Review Letters, 1969