Photoluminescence in pure and doped amorphous silicon
- 1 March 1977
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 35 (3) , 831-835
- https://doi.org/10.1080/14786437708236013
Abstract
Luminescence and excitation spectra are reported for undoped glow discharge a-Si, and a range of n and p-type samples produced by substitutional doping. At low temperatures the doped samples show evidence of a strong, non-activated quenching process, probably due to charged defects.Keywords
This publication has 8 references indexed in Scilit:
- Luminescence in amorphous semiconductorsAdvances in Physics, 1976
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Substitutional doping of amorphous siliconSolid State Communications, 1975
- Influence of Preparation Conditions on the Radiative Recombination in Amorphous SiliconPublished by Springer Nature ,1974
- Radiative and Auger processes in semiconductorsJournal of Luminescence, 1973
- Photoconductivity and absorption in amorphous SiJournal of Non-Crystalline Solids, 1973
- Photoluminescence in amorphous As2S3Journal of Physics C: Solid State Physics, 1973
- Spectral Distribution of PhotoconductivityPhysical Review B, 1956