Floating Zone Growth of Single Crystal Alkali Halides
- 1 December 1962
- journal article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 33 (12) , 1378-1386
- https://doi.org/10.1063/1.1717783
Abstract
A general discussion is given of the main factors affecting the successful attainment by induction melting of stable floating zones in a wide variety of materials. The emphasis is on poor conductors, for which the problems involved can usually be solved. Details of the apparatus and procedures used in the floating zone growth of NaCl, KCl, KBr, KI, and LiF single crystals are given, as well as specifications of the quality of such crystals as determined by various tests.Keywords
This publication has 13 references indexed in Scilit:
- Growth of Refractory Crystals Using the Induction Plasma TorchJournal of Applied Physics, 1961
- Arc-Image Furnace for Growth of Single CrystalsReview of Scientific Instruments, 1960
- Contribution to the Floating Zone Refining of SiliconReview of Scientific Instruments, 1957
- The floating-zone melting of refractory metals by electron bombardmentJournal of Scientific Instruments, 1957
- Floating Zone Recrystallization of SiliconReview of Scientific Instruments, 1954
- Shapes of Floating Liquid Zones between Solid RodsJournal of Applied Physics, 1953
- Color Centers in Alkali Halides at 5°KPhysical Review B, 1952
- The Electrical Conductivity of Liquid GermaniumPhysical Review B, 1951
- Über KCl-Kristalle mit Zusätzen von ErdalkalichloridenThe European Physical Journal A, 1949
- Chauffage par induction d'un disque circulaire mince normal aux lignes de champJournal de Physique et le Radium, 1946