Crystallographic Characterization of ZnSxSe1-x Epitaxial Films
- 1 May 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (5A) , L756
- https://doi.org/10.1143/jjap.27.l756
Abstract
Crystalline quality of ZnS x Se1-x films grown on GaAs substrates has been investigated in detail using the X-ray double-crystal method. Respective fluctuations in orientation and spacing of lattice planes are measured separately. It is shown that the crystalline quality of ZnS x Se1-x films is noticeably affected by the fluctuation in orientation caused by lattice mismatch and partly by the fluctuation in spacing which may be associated with an inhomogeneous distribution of Se and S atoms. Improvement of the quality by lattice matching is due to a reduction of fluctuation in orientation.Keywords
This publication has 6 references indexed in Scilit:
- A new technique for crystallographic characterization of heteroepitaxial crystal filmsJournal of Applied Physics, 1988
- The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs SubstratesJapanese Journal of Applied Physics, 1986
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- Study of cracking mechanism in GaN/α-Al2O3 structureJournal of Applied Physics, 1985
- The effect of rapid early growth on the physical and electrical properties of heteroepitaxial siliconJournal of Crystal Growth, 1975
- Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on GermaniumJournal of Applied Physics, 1966