Bound phonons inn-type GaP

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Abstract
Detailed Raman-scattering experiments of bound phonons in tellurium- and sulfur-doped n-type gallium phosphide have been performed on a set of well-characterized samples. The bound-phonon features have been examined as a function of doping concentration, temperature, and hydrostatic pressure. It is experimentally found that the variation of these phonons cannot be explained within existing theories. A new physical picture is proposed to reproduce, at least qualitatively, the experimental observations, and it leads to consideration of these bound phonons as confined phonons with a spatial extension determined by both the Bohr radius of the impurity and the dispersion of the LO-phonon branch of the host lattice.