Low-energy BF2+ implants
- 1 May 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 10-11, 526-528
- https://doi.org/10.1016/0168-583x(85)90301-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Sheet Resistance and Junction Depth Relationships in Implanted Species DiffusionJournal of the Electrochemical Society, 1983
- Rapid thermal annealing of BF2+implanted, preamorphized siliconIEEE Electron Device Letters, 1983
- Electrical properties of Si heavily implanted with boron molecular ionsJournal of Applied Physics, 1982
- Low energy range distributions of 10B and 11B in amorphous and crystalline siliconNuclear Instruments and Methods in Physics Research, 1982
- Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+Journal of Applied Physics, 1979